Schottky Diode models | OhmSpice Documentation

Symbol

Default symbol for a new Schottky Diode component.

Model choice belongs to each placed Schottky Diode component. Changing one component does not change other instances or the default for future placements.

Standard

Low forward drop with junction capacitance and no reverse-recovery storage.

Default

Qualified analyses

Operating point
DC sweep
AC sweep
Transient

Model definition

The Standard model uses a continuous diode curve fitted to the lower forward-voltage point typical of a Schottky device. Series resistance controls the high-current slope.

A constant junction capacitance is included. No stored minority-carrier charge is added.

Equations

V_j=V_D-I_D R_S,\qquad I_S=\frac{I_F}{\exp\!\left(\frac{V_F-I_F R_S}{1.8V_T}\right)-1}

The entered forward point determines the native diode saturation current.

I_D=I_S\!\left[\exp\!\left(\frac{V_j}{1.8V_T}\right)-1\right]+C_J\frac{\mathrm dV_j}{\mathrm dt}

The electrical model is the Practical diode equation with Schottky-like defaults.

\tau_T=0,\qquad BV\ \text{is not fitted}

Zero transit time removes reverse-recovery charge, and no avalanche breakdown voltage is fitted.

Parameters

Parameter	Default	Accepted values
Forward voltageForward voltage at the stated forward current. Schottky parts sit near 0.3 to 0.45 V.	0.35 V at 10 mA	Greater than 0; reference condition greater than 0
Series resistanceBulk series resistance, which sets how the drop grows with current.	50 mΩ	Greater than 0
Junction capacitanceZero-bias junction capacitance. Schottky parts are typically larger than a signal diode.	100 pF	Greater than 0

Limits

Reverse leakage, breakdown, temperature dependence, and nonlinear capacitance are omitted.
Reverse recovery is intentionally absent.

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